SI7792DP-T1-GE3 | |
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Part Number | SI7792DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 30V 40.6A/60A PPAK |
Quantity Available | 2575 pcs new original in stock. Request Stock & Quotation |
Modely Ecad | |
Datasheets | 1.SI7792DP-T1-GE3.pdf2.SI7792DP-T1-GE3.pdf |
SI7792DP-T1-GE3 Price |
Mangataha Price & Lead Time Online or Email us: Info@ariat-tech.com |
Fampahalalana ara-teknika momba ny SI7792DP-T1-GE3 | |||
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Manufacturer Part Number | SI7792DP-T1-GE3 | Category | |
Manufacturer | Electro-Films (EFI) / Vishay | Description | MOSFET N-CH 30V 40.6A/60A PPAK |
Package / Case | PowerPAK® SO-8 | Quantity Available | 2575 pcs |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
teknolojia | MOSFET (Metal Oxide) | Package Device Device | PowerPAK® SO-8 |
Series | SkyFET®, TrenchFET® Gen III | Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) | Package / Case | PowerPAK® SO-8 |
Fonosana | Tape & Reel (TR) | Operating Temperature | -55°C ~ 150°C (TJ) |
Tendrombohitra | Surface Mount | Ny Capacitance Input (Ciss) (Max) @ Vds | 4735 pF @ 15 V |
Fiantohana fitaterana (Qg) (Max) @ Vgs | 135 nC @ 10 V | FET Type | N-Channel |
FET Feature | Schottky Diode (Body) | Drive Voltage (Max Rds On, Min Rds) | 4.5V, 10V |
Mialà amin'ny loharanom-bahoaka (Vdss) | 30 V | Current - mitete tsy tapaka (Id) @ 25 ° C | 40.6A (Ta), 60A (Tc) |
Laharana vokatra fototra | SI7792 | ||
Download | SI7792DP-T1-GE3 PDF - EN.pdf |
Saham SI7792DP-T1-GE3 | Vidiny SI7792DP-T1-GE3 | Electronics SI7792DP-T1-GE3 | |||
SI7792DP-T1-GE3 Components | Inventory SI7792DP-T1-GE3 | SI7792DP-T1-GE3 Digikey | |||
SI7792DP-T1-GE3 mpamatsy | Alao ny Internet SI7792DP-T1-GE3 | Fanontaniana SI7792DP-T1-GE3 | |||
Sary SI7792DP-T1-GE3 | Sary SI7792DP-T1-GE3 | SI7792DP-T1-GE3 PDF | |||
SI7792DP-T1-GE3 Datasheet | Misintona Datyheet SI7792DP-T1-GE3 | Electro-Films (EFI) / Vishay mpanamboatra |
Tetika mifandraika amin'ny SI7792DP-T1-GE3 | |||||
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