SI7792DP-T1-GE3
Part Number SI7792DP-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 40.6A/60A PPAK
Quantity Available 2575 pcs new original in stock.
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Modely Ecad
Datasheets 1.SI7792DP-T1-GE3.pdf2.SI7792DP-T1-GE3.pdf
SI7792DP-T1-GE3 Price Mangataha Price & Lead Time Online
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Manufacturer Part Number SI7792DP-T1-GE3 Category  
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET N-CH 30V 40.6A/60A PPAK
Package / Case PowerPAK® SO-8 Quantity Available 2575 pcs
Vgs (th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
teknolojia MOSFET (Metal Oxide) Package Device Device PowerPAK® SO-8
Series SkyFET®, TrenchFET® Gen III Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Package / Case PowerPAK® SO-8
Fonosana Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Tendrombohitra Surface Mount Ny Capacitance Input (Ciss) (Max) @ Vds 4735 pF @ 15 V
Fiantohana fitaterana (Qg) (Max) @ Vgs 135 nC @ 10 V FET Type N-Channel
FET Feature Schottky Diode (Body) Drive Voltage (Max Rds On, Min Rds) 4.5V, 10V
Mialà amin'ny loharanom-bahoaka (Vdss) 30 V Current - mitete tsy tapaka (Id) @ 25 ° C 40.6A (Ta), 60A (Tc)
Laharana vokatra fototra SI7792  
DownloadSI7792DP-T1-GE3 PDF - EN.pdf
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